Books

  1. Eiichi YAMAGUCHI, "The Sun in a Test Tube (in Japanese) " (ISBN4-06-20633-X) , Kodansha (May, 1993)

  2. Eiichi YAMAGUCHI, "The Sun in a Test Tube (in Korean) " (ISBN89-85552-07-4) , Imprema Korea (March, 1994)

  3. Eiichi YAMAGUCHI, "Thin film boron nitride for semiconductor application", Synthesis and Properties of Boron Nitirde (ISBN0-87849-606-8) Edited by J. J. Pouch, S. A. Alterovitz, Trans Tech Publications (May, 1990) .

  4. Tomonori ITO, Takahisa OHNO and Eiichi YAMAGUCHI, "Computer-Aided Materials Design for Semiconductors" (ISBN 0935-9648) , Advanced Materials (Augusut, 1993) .

  5. Naoki TANAKA and Eiichi YAMAGUCHI, "NHK Special Document - Data map Japan: Prescription for recovering Japanese Economy (in Japanese) " (ISBN4-14-969211-4) ,NHK Publishing (May, 2002)

  6. Eiichi YAMAGUCHI, "Chapter 7: Semiconductor and Device Industries (Science Based Industries) (in Japanese) ", edited by Akira GOTO and Hiroyuki ODAGIRI, NTT Publishing (March, 2003)

  7. Innovation : Paradigm Disruptions and Fields of Resonances Eiichi YAMAGUCHI, "Innovation : Paradigm Disruptions and Fields of Resonances (in Japanese) " (ISBN 4-7571-2174-1) , NTT Publishing (March, 2006)

  8. Eiichi YAMAGUCHI, "Rethinking Innovation" "Recovering from Success: Innovation And Technology Management in Japan" (ISBN 978-0199297320) Editied by R. Cole and D. Hugh Whittaker, Oxford University Press (2006)

  9. Root for the JR Fukuchiyama Train IncidentEiichi YAMAGUCHI, "Root for the JR Fukuchiyama Train Incident -Rethinking Corporate Social Responsibility from Science (in Japanese) " (ISBN 978-4-7571-2196-6) , NTT Publishing (May, 2007)

  10. FUKUSHIMAレポートEiichi YAMAGUCHI、Yoshio NISHIMURA、Morinosuke KAWAGUCHI 『FUKUSHIMAレポート－原発事故の本質』(in Japanese)　（ISBN 978-4-86443-000-5), NikkeiBP consulting (January 2012)

  11. Five Physics Theories to Learn Before You DieEiichi YAMAGUCHI 『Five Physics Theories to Learn Before You Die』(in Japanese)　（ISBN 978-4480016003), Chikuma shobo (May,2015)

  12. Science of Science, Technology and Innovation policy IncidentEiichi YAMAGUCHI, "Science of Science, Technology and Innovation policy (in Japanese) " (ISBN 978-4130461153) , Tokyo university Publishing (March, 2015)

  13. Eiichi YAMAGUCHI, "総合生存学: グローバル・リーダーのために (in Japanese) " (ISBN 978-4876988792) , Kyoto University Press (July, 2015)

  14. Eiichi YAMAGUCHI, "イノベーションはなぜ途絶えたか: 科学立国日本の危機 (ちくま新書1222) (in Japanese) " (ISBN 978-4480069320) , Chikumashobo Ltd. (December, 2016)

  15. Eiichi YAMAGUCHI, "物理学者の墓を訪ねる ひらめきの秘密を求めて (in Japanese) " (ISBN 978-4822237325) , Nikkei Business Publications, Inc. (February, 2017)

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Papers

1977 - 1979 Electron correlation effects on Anderson localization (Theory)

(Click here to see Research Result)

  1. H. Kamimura and E. Yamaguchi, "Electron correlation effects on Anderson localized states", Solid State Communications (October 1978) Vol.28, No.1, p.127-131.

  2. E. Yamaguchi, H. Aoki and H. Kamimura, "Intra- and interstate interactions in Anderson-localised states", Journal of Physics C (Solid State Physics) (28 November 1979) Vol.12, No.22, p.4801-4815.

  3. E. Yamaguchi, H. Aoki and H. Kamimura, "Intra- and inter-state interactions in Anderson localized states", Journal of Non-Crystalline Solids (January - February 1980) Vol.35-36, Pt.1, p.47-52; Proceedings of the 8th International Conference on Amorphous and Liquid Semiconductors. Cambridge, USA, 27-31 August 1979.

1979 - 1984 Low dimensional electron systems in III-V semiconductors (Experiment)

(Click here to see Research Result)

  1. Y. Shinoda, M. Okamura, E. Yamaguchi and T. Kobayashi, "InGaAsP n-channel inversion-mode MISFET", Japanese Journal of Applied Physics (November 1980) Vol.19, No.11, p.2301-2302.

  2. E. Yamaguchi, T. Nishioka and Y. Ohmachi, "Ohmic contacts to Si-implanted InP", Solid-State Electronics (March 1981) Vol.24, No.3, p.263-265.

  3. Y. Hirota, M. Okamura, E. Yamaguchi, T. Nishioka, Y. Shinoda and T. Kobayashi,"Surface controlled InP-MIS (metal-insulator-semiconductor) triodes", Journal of Applied Physics (May 1981) Vol.52, No.5, p.3727-3503.

  4. T. Kobayashi, M. Okamura, E. Yamaguchi, Y. Shinoda and Y. Hirota, "Effect of pyrolytic Al2O3 deposition temperature on inversion-mode InP metal-insulator-semiconductor field-effect transistor", Journal of Applied Physics (October 1981) Vol.52, No.10, p.6434-6436.

  5. E. Yamaguchi and T. Kobayashi, "Optically-gated InP-MISFET: A new high-gain optical detector", Japanese Journal of Applied Physics (January 1982) Vol.21, No.1, Pt.1, p.104-108.

  6. E. Yamaguchi and T. Kobayashi, "Impact-ionization of excitons and application to gate-controlled bistable switching", Japanese Journal of Applied Physics, Part 1 (1982) Vol.21, Suppl.21-1, p.389-394; 13th Conference on Solid State Devices. Tokyo, Japan, 26-27 August 1981.

  7. E. Yamaguchi and T. Kobayashi, "New method for determining distribution of interface states in an MIS system", Electronics Letters (1 April 1982) Vol.18, No.7, p.290-292.

  8. E. Yamaguchi, "Isothermal capacitance transient spectroscopy in MIS structures", Japanese Journal of Applied Physics, Part 1 (November 1982) Vol.21, No.11, p.1628-1632

  9. E. Yamaguchi, Y. Hirota and M. Minakata, "Chemical deposition of PAsxNy films onto III-V compound semiconductors", Thin Solid Films (13 May 1983) Vol.103, No.1-2, p.201-209.

  10. E. Yamaguchi and M. Minakata, "Magnetoconductance study of inversion layers on InAs metal-insulator-semiconductor field-effect transistors", Applied Physics Letters (15 November 1983) Vol.43, No.10, p.965-967.

  11. E. Yamaguchi, M. Minakata and Y. Furukawa, "Current drift phenomena and spectroscopic measurement method for insulator trap level parameters in InP MIS-FETs", Japanese Journal of Applied Physics, Part 2 (January 1984) Vol.23, No.1, p.L49-51.

  12. E. Yamaguchi and M. Minakata, "Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition", Journal of Applied Physics (15 April 1984) Vol.55, No.8, p.3098-3102.

  13. O. Mikami, M. Okamura, E. Yamaguchi, Y. Hirota and Y. Furukawa, "Current-drift suppressed InP MISFETs with new gate insulator", Japanese Journal of Applied Physics, Part 1 (October 1984) Vol.23, No.10, p.1408-1409.

  14. E. Yamaguchi, "Theory of defect scattering in two-dimensional multisubband electronic systems on III-V compound semiconductors", Journal of Applied Physics (15 September 1984) Vol.56, No.6, p.1722-1727.

  15. E. Yamaguchi, "Electron subbands and transport properties in inversion layers of InAs and InP", Physical Review B (15 October 1985) Vol.32, No.8, p.5280-5288.

  16. Y. Hirota, M. Okamura, T. Hisaki and E. Yamaguchi, "Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors", Journal of Applied Physics (1 January 1987) Vol.61, No.1, p.277-283.

  17. M. Okamura, Y. Hirota, E. Yamaguchi and O. Mikami, "The effect of Fe concentration in substrates on the characteristics of InP MISFETs", Japanese Journal of Applied Physics, Part 1 (June 1987) Vol.26, No.6, p.976-977.

  18. M. Okamura, E. Yamaguchi and Y. Hirota, "First observation of quantum Hall effect in InP-MISFET", Japanese Journal of Applied Physics, Part 2 (June 1988) Vol.27, No.6, p.1151-1153.

  19. Y. Hirota, M. Okamura, E. Yamaguchi and T. Hisaki, "Film deposition temperature dependence of electron mobility for accumulation-mode InP metal-insulator-semiconductor field-effect transistors", Journal of Applied Physics (1 February 1989) Vol.65, No.3, p.1328-1337.

1984 - 1991 Electronic structures of III-V semiconductors (Theory)

(Click here to see Research Result)

  1. E. Yamaguchi, "The origin of the DX center in AlxGa1-xAs", Japanese Journal of Applied Physics, Part 2 (August 1986) Vol.25, No.8, p.L643-645.

  2. E. Yamaguchi, "Theory of the DX centers in III-V semiconductors and (001) superlattices", Journal of the Physical Society of Japan (August 1987) Vol.56, No.8, p.2835-2852.

  3. E. Yamaguchi, "Superlattice Approach to the Interface States in III-V Semiconductors", Journal of the Physical Society of Japan (July 1988) Vol. 57, No.7, p.2461-2475.

  4. K. Shiraishi and E. Yamaguchi, "Electronic structure of an InAs monomolecular plane in GaAs", Physical Review B (Condensed Matter) (15 August 1990) Vol.42, No.5, p.3064-3068.

  5. E. Yamaguchi, K. Shiraishi and T. Ohno, "First principle calculation of the DX-center ground-states in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices", Journal of the Physical Society of Japan (September 1991) , Vol. 60, No. 9, p.3093-3107.

  6. N. Shigekawa and E. Yamaguchi, "A Monte-Carlo supercell approach for the effects of disorder on the upper-valley electronic properties in InGaAs ternary alloys", Japanese Journal of Applied Physics, Part 2 (August 1991) , Vol. 30, No. 8A, p.L1340-1342.

  7. T. Ohno and E. Yamaguchi, "Comment on ""Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys""", Physical Review B (15 September 1991) Vol.44, No.12, p.6527-6529.

  8. N. Shigekawa and E. Yamaguchi, "Effects of disorder on electroncic conduction properties at subsidiary energy minima in Ternaly InGaAs alloys", Semiconduct. Sci. Technol. (July 1992) Vol. 7, p. B369-B371.

  9. E. Yamaguchi, K. Shiraishi and H. Kageshima, "Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors", Phys. Stat. Sol. (b) (1999) , Vol. 211, p. 157-161.

1991 - 1998 Optical properties of III-V semiconductors (Experiment & Theory)

(Click here to see Research Result)

  1. E. Yamaguchi and M. R. Junnarkar, "First principle calculation and photo-luminescence spectroscopy of the DX center", Jpn. J. Appl. Phys. Vol. 32 (1993) Suppl. 32-1, p.206-211.

  2. M. R. Junnarkar, E. Yamaguchi and T. Saku, "Anti-Stokes photoluminescence related to the deep donor states in Si double delta-doped AlxGa1-xAs ", Materials Science Forum Vol. 117-118 (1993) p.321-326.

  3. E. Yamaguchi and M. R. Junnarkar, "Discovery of new photoluminescence effect related to deep donor levels in Si-doped AlxGa1-xAs and microstructures", Journal of the Physical Society of Japan (July 1995) , Vol. 64, No. 7, p. 2656-2668.

  4. M. R. Junnarkar and E. Yamaguchi, "Anti-Stokes photoluminescence from Si modulation doped AlyGa1-yAs/ AlxGa1-xAs QW and Si double delta doped AlxGa1-xAs ", Solid State Electronics, (1996) , Vol. 40, Nos. 1-8, p. 665-671.

  5. E. Yamaguchi and M. R. Junnarkar, "Effects of Nitrogen Vacancy on Optical Properties of Nitride Semiconductors", J. Crystal Growth (1998) , Vol. 189/190, p. 570-574.

1989 - 1998 Anormalous nuclear effects in deuterated solids (Experiment)

(Click here to see Research Result)

  1. E. Yamaguchi and T. Nishioka, "Cold nuclear fusion induced by controlled out-diffusion of deuterons in palladium", Japanese Journal of Applied Physics, Part 2 (April 1990) Vol.29, No.4, p. L666-669.

1998 - 2003 Science & technology public policy (Social science)

(Click here to see Research Result)

2003 - Innovation and technology management (Multidisciplinary)

(Click here to see Research Result)

  1. E. Yamaguchi, "The Dimness of the Blue Diode Lawsuit", Japan Echo (June 2004) , Vol.31 No.3, 27 - 31

  2. E. Yamaguchi, "El pleito del diode azul: un caso poco claro", Cuadernos de Japon (June 2004) , Vol.17 No.2, 13 - 18

  3. E. Yamaguchi, "The Dimness of the Blue Diode Lawsuit", ITEC Research Paper Series (December 2004) , Vol.4 No.14, 1 - 11

  4. Hideki IIJIMA, E. Yamaguchi, "Decrease in the Number of Journal Articles in Physics in Japan: Corelation between the Number of Articles and Doctoral Students" , Journal of Integrated Creative Studies, No. 2015-0009, pp.1-20.

  5. Hiroyasu INOUE, E. Yamaguchi, "Evaluation of the Small Business Innovation Research Program in Japan" , SAGE Open,Vol.7,Issue 1,pp.1-9

2003 - Development of nitride semiconductor devices and its industrialization (Multidisciplinary)

(Click here to see Research Result)

  1. S. Yamada, T.Ohnishi, T. Kakegawa, M. Alabori, T. Suzuki, H. Sugiura, F. Nakamura, E. Yamaguchi and H. Kawai, "High Quality Two-Dimensional Electron Gas at Large Scale GaN/AlGaN Wafer Interface Prepared by Mass Production MOCVD Systems", Solid State Electronics (January 2005) , Vol.133, 647 - 649
  2. T. Saito, T. Hitora, H. Hitora, H. Kawai, I. Saito, and E.Yamaguchi, “UV/VUV Photodetectors using Group III - Nitride Semiconductors”, to be published in Phys. Stat. Solid. A (2009).
  3. T. Saito, T. Hitora, H. Ishihara, M. Matsuoka, H. Hitora, H. Kawai, I. Saito, and E. Yamaguchi, “Group III - Nitride Semiconductor Schottky Barrier Photodiodes for the Radiometric Use in the UV and VUV Regions”,Metrologia（May 2009）Vol.46, S272-S276.
  4. S. Narita, T. Hitora, E. Yamaguchi, Y. Sakemi, M. Itoh, H. Yoshida, J. Kasagi, K. Neichi “Effects of high-energy proton and electron irradiation on GaN Schottky diode”,Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Assoceated Equipments, (July 2013) Vol. 57, pp.1-4.

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Conferences

1977 - 1979 Electron correlation effects on Anderson localization (Theory)

(Click here to see Research Result)

  1. E. Yamaguchi, H. Aoki and H. Kamimura, "Intra- and inter-state interactions in Anderson localized states", Journal of Non-Crystalline Solids (January - February 1980) Vol.35-36, Pt.1, p.47-52; Proceedings of the 8th International Conference on Amorphous and Liquid Semiconductors. Cambridge, USA, 27-31 August 1979.

1979 - 1984 Low dimensional electron systems in III-V semiconductors (Experiment)

(Click here to see Research Result)

  1. E. Yamaguchi and M. Minakata, "Characterization of a new gate insulator BN on InP grown by low-temperature CVD", Extended Abstracts of the 15th Conference on Solid State Devices and Materials, Tokyo, Japan, 30 August - 1 September 1983. p.81-84.

  2. E. Yamaguchi, "Transport properties of n-channel inversion layers on InP and InAs MISFETs", Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, Japan, 30 August - 1 September 1984. p.371-374.

  3. O. Mikami, M. Okamura, E. Yamaguchi, Y. Hirota and Y. Furukawa, "Current-drift suppressed InP MISFETs with a new gate insulator", Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, Japan, 30 August - 1-September, 1984, p.22-23.

  4. E. Yamaguchi, "Electron Subbands and Transport Properties in Inversion Layers on InAs and InP", American Physical Society March Meeting, Baltimore

1984 - 1991 Electronic structures of III-V semiconductors (Theory)

(Click here to see Research Result)

  1. E. Yamaguchi, "The origin of the DX center and EL2 in AlxGa1-xAs", Proceedings of the 4th Conference on Semi-Insulating III-V Materials, Hakone, May 18-21, 1986, pp. 549, Edited by H. Kukimoto and S. Miyazawa, North-Holland.

  2. E. Yamaguchi, "Electronic structures of GaAs-AlAs (111) superlattices and interfaces", Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Japan, p.483-486.

  3. E. Yamaguchi, "Electronic structures of III-V semiconductor-insulator interfaces", Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, 1988, p. 623; Edited by W. Zawadzki, Polish Academy of Science.

  4. E. Yamaguchi, K. Shiraishi and T. Ohno, "First principle calculation of the DX centers in GaAs, AlxGa1-xAs Alloys and AlAs/GaAs superlattices", Proceedings of the 20th International Conference on the Physics of Semiconductors, Thessaloniki, 1990, p. 501; Edited by E. M. Anastassakis and J. D. Joannopoulus, World Scientific.

  5. N. Shigekawa and E. Yamaguchi, "Effects of disorder onto the conduction electronic properties at subsidiary energy minima in InGaAs ternary alloys", Proceedings of the 7th International Conference on the Hot Carriers in Semiconductors, Nara, 1991, p.B369-371; Edited by C. Hamaguchi.

  6. E. Yamaguchi, K. Shiraishi and H. Kageshima, "Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors", Proceedings of International Conference on High Pressure Semiconductor Physics, Thessaloniki, August, 1998.

1991 - 1998 Optical properties of III-V semiconductors (Experiment & Theory)

(Click here to see Research Result)

  1. E. Yamaguchi and M. R. Junnarkar, "First principle calculation and photo-luminescence spectroscopy of the DX center (Invited) ", Proceedings of International Conference on High Pressures in Semiconductor Physics, Kyoto, 1992; Edited by S. Minomura.

  2. M. R. Junnarkar, E. Yamaguchi and T. Saku, "Anti-Stokes photoluminescence related to the deep donor states in Si double delta-doped AlxGa1-xAs ", Proceedings of International Conference on Shallow Impurities in Semiconductors, Kobe, 1992; Edited by T. Nishino.

  3. M. R. Junnarkar and E. Yamaguchi, "Anti-Stokes photoluminescence from Si modulation doped AlyGa1-yAs/ AlxGa1-xAs QW and Si double delta doped AlxGa1-xAs ", Proceedings of 7th International Conference on Modulated Semiconductor Structures, Madrid, 1995.

  4. E. Yamaguchi and M. R. Junnarkar, "Effects of Nitrogen Vacancy on Optical Properties of Nitride Semiconductors", Proceedings of International Conference on Nitride Semiconductors, Tokushima, October, 1997, p. 278.

1989 - 1998 Anormalous nuclear effects in deuterated solids (Experiment)

(Click here to see Research Result)

  1. E. Yamaguchi and T. Nishioka, "Nuclear fusion induced by the controlled out-transport of deuterons in palladium", Proceedings of International Progress Review of Anomalous Nuclear Effects in Deuterium/Solid Systems, Provo, October, 1990, p.354; Edited by S. E. Jones et al., AIP Conference Proceedings 228.

  2. E. Yamaguchi and T. Nishioka, "New method for inducing anomalous nuclear effects in deuterated palladium system", Proceedings of International ISEM Symposium on Nonlinear Phenomena in Electromagnetic Fields, Nagoya, January, 1992, p.21-24; Edited by T. Furuhashi and Y. Uchikawa (Supplement to Vol. 3 of the International Journal of Applied Electromagnetics in Materials) .

  3. E. Yamaguchi and T. Nishioka, "Direct evidence for nuclear fusion reactions in deuterated palladium", Proceedings of International Conference on Cold Fusion, Nagoya, October, 1992, p.179-188, Edited by H. Ikegami; Frontier Science Series No. 4, Universal Academy Press.

  4. E. Yamaguchi and H. Sugiura, "Excess Heat and Nuclear Products from Pd:D/Au Heterostructures by the 'In-vacuo' Method", Proceedings of International Conference on Cold Fusion, Vancouver, 1998, p.420-424.

  5. H. Sugiura and E. Yamaguchi, "Calorimetric Analysis of the Excess Heat Generated from Pd:D and Pd:H by the 'In-vacuo' Method", Proceedings of International Conference on Cold Fusion, Vancouver, 1998, p.366-370.

1998 - 2003 Science & technology public policy (Social science)

(Click here to see Research Result)

  1. E. Yamaguchi, S. Mizukami and S. Fujimura, "How Japan can create social conditions conducive to science-technology feedback (Invited) ", NISTEP International Conference "Entrepreneurship and National Innovation Systems", National Institute of Science and Technology Policy, Tokyo.

  2. E. Yamaguchi, M. Matsubara and N. Tanaka, "Topographic Analysis for the Productivity of Japan's Agriculture -- Effects of Governmental Intervention on the Agricultural Competitiveness", 2002 International Conference of Georgia Political Science Association, 2002, Savannah.

  3. M. Matsubara, E. Yamaguchi, S. Sato and N. Tanaka, "Topographic Analysis for the Structure of Japan's Agriculture -- The Risk and Self-Organization", 2002 International Conference of Georgia Political Science Association, 2002, Savannah

  4. E. Yamaguchi, "Structure of Innovation--'The Field of Resonance' Management for Realizing "Paradigm-Disruptive" Innovation" (Invited) , International Consortium for Management of Technology, Tokyo, 2003.

2003 - Innovation and technology management (Multidisciplinary)

(Click here to see Research Result)

  1. E. Yamaguchi, "This remarkable paradigm-disruptive innovation -- From a viewpoint of MOT (management of technology) (Invited) ", The 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003.
  2. E. Yamaguchi, "How we develop efficient systems of MOT education in Japan (Invited) ", MOT Internatonal Symposium, Tokyo, 2003
  3. E. Yamaguchi, "Technological Innovation and Future Outlook of Japan (Invited) ", International Consortium Program, Tokyo, 2003.
  4. E. Yamaguchi, "Renaissance of Entrepreneurship in Kansai (invited) ", ITEC International Forum, Kyoto, 2004.
  5. E. Yamaguchi, "Rethinking Innovation: New Model for High-Tech Venture from a Japanese University", Japan-UK International Forum, 2005
  6. E. Yamaguchi and Y. Ashikaga, "A New Model for High-tech Venture from a Japanese University", NanoBiz 2007, Singapore
  7. E. Yamaguchi, "Is global alliance feasible to remove the air pollution of east Asia?", 2nd Global Innovation Eco-System (GIES 2007) , Tokyo, Japan
  8. E. Yamaguchi, "Low Environmental Impact Transport System", 3rd Global Innovation Eco-System (GIES 2008) , Tokyo, Japan.
  9. E. Yamaguchi, "Structure of Innovation and Innovation Diagram (invited)", International Symposium on Innovation Strategy (ISIS 2008), 15 Sep 2008, University of Cambridge.
  10. E. Yamaguchi, "Industrial Revolution as a Paradigm Disruptive Innovation (invited)", International Symposium on Innovation Strategy (ISIS 2008), 15 Sep 2008, University of Cambridge.
  11. E. Yamaguchi, "A Case Study for Paradigm Disruptive Innovation: Blue Light Emitting Devices-- How it Happened only in Japan ? (invited)", 07 November 2008, Department of Engineering, University of Cambridge.
  12. E. Yamaguchi, "A Case Study for Paradigm Disruptive Innovation: Blue Light Emitting Devices-- How it Happened only in Japan ? (invited)", Jetro, London 12 Dec 2008.
  13. E. Yamaguchi, "Rethinking innovation: How high-tech industries can recover their competitiveness in the UK (invited)", ASH Colloquium, Clare Hall, University of Cambridge, 13 Jan 2009.
  14. E. Yamaguchi, "A Case Study for Paradigm Disruptive Innovation: Blue Light Emitting Devices-- How it Happened in Japan ?", Lecture at Prof Humphreys Institute, University of Cambridge, 15 Jan 2009.
  15. E. Yamaguchi, "Innovation Theory and Lawsuit on Blue LED (invited)", Keltie Symposium, London, 17 Feb 2009.
  16. E. Yamaguchi, "Rethinking innovation and the Japanese way of science and technology - How the revolution in Blue Light Emitting Diodes happened only in Japan ? (invited)", Symposium for Needham Research Institute, University of Cambridge, 06 March 2009.
  17. E. Yamaguchi, "Innovation Model toward Breakthroughs ", (invited) INC06 (The 6th International Nanotechnology Conference on Communication and Co-operation), Grenoble-France, 20 May 2010.
  18. Eiichi Yamaguchi, "How will we accomplish breakthrough innovations?", The 8th ITEC International Conference 'Overcoming Two "Ends"', Kyoto, 04 March 2011.
  19. Eiichi YAMAGUCHI,"Cause of Fukushima Nuclear Plant Accident -- Why did the error of technology management happen?", 2nd International Symposium on Innovation Strategy, University of Cambridge, Cambridge, 22 August 2011.
  20. Eiichi Yamaguchi, “The actual reason why Fukushima Nuclear Plant Accident could not have been avoided”, The Third International Symposium on Innovation Strategy, University of Cambridge, U.K., September 2012.
  21. Eiichi Yamaguchi, "Three Types of Breakthrough Innovations for Creating Future Industries (invited)", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, January 2013. p.33.

2003 - Development of nitride semiconductor devices and its industrialization (Multidisciplinary)

(Click here to see Research Result)

  1. S. Yamada, T.Ohnishi, T. Kakegawa, M. Alabori, T. Suzuki, H. Sugiura, F. Nakamura, E. Yamaguchi and H. Kawai, "High Quality Two-Dimensional Electron Gas at Large Scale GaN/AlGaN Wafer Interface Prepared by Mass Production MOCVD Systems" The 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003.
  2. Terubumi Saito, Toshimi Hitora, Hisako Hitora, Hiroji Kawai, Ichiro Saito and Eiichi Yamaguchi, “UV/VUV Photodetectors using Group III - Nitride Semiconductors”, International Workshop on Nitride Semiconductors, Montreux, 06 October 2008.
  3. Toshimi Hitora, Terubumi Saito, Hiroji Kawai, Eiichi Yamaguchi and Ichiro Saito, "Narrow Bandwidth UV Detectors Composed of AlxGa1-xN Photodiodes with AlyGa1-yN Optical Windows",  10th Int. Conf. on New Developments and Applications in Optical Radiometry, Daejeon (Korea), 14 October 2008.
  4. Terubumi Saito, Toshimi Hitora, Hideaki Ishihara, Mikihiko Matsuoka, Hisako Hitora, Hiroji Kawai, Ichiro Saito and Eiichi Yamaguchi, "Group III - Nitride Semiconductor Schottky Barrier Photodiodes for the Radiometric Use in the UV and VUV Regions",  10th Int. Conf. on New Developments and Applications in Optical Radiometry, Daejeon, Korea, 15 October, 2008
  5. S. Narita, Y. Chiba, D. Ichinose, T. Hitora, E. Yamaguchi, Y. Sakemi, M. Itoh, H. Yoshida, J. Kasagi, "Performance of GaN Ionizing Detector and Its Radiation Hardness", 16th International Workshop on Room Temperature SemiconductorX-and Gamma-Ray Detectors, Dresden, Germany, 23 October 2008.
  6. E. Yamaguchi, "GaN --Paradigm Disruptive Innovation Creating New Semiconductor Industries" (invited), International Symposium "Developing Innovative Gallium Nitride Technology & Devices for a Green Future", Industrial Technology Research Institute, Hsinchu, Taiwan, January 11, 2011.

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Patents

  1. 光半導体装置,　 (特許1581651)　, 1980年2月
  2. 光半導体装置, 　(特開昭56-169377)　, 1980年2月
  3. 半導体光電変換装置, 　(特許1436645)　, 1980年8月
  4. 半導体光電変換装置, 　(特許1454005)　, 1980年8月
  5. 半導体光電変換装置, 　(特開昭57-036874)　
  6. 電界制御型光半導体装置, 　(特許1454012)　, 1981年5月
  7. 半導体結晶上への絶縁膜の形成法, 　(特許1513730)　, 1981年10月
  8. 半導体結晶上への絶縁膜の形成法,　 (特開昭58-068936)　, 1981年10月
  9. 半導体結晶上への絶縁膜の形成法, 　(特開昭58-068937)　, 1981年10月
  10. 半導体装置及びその製法, 　(特許1535975)　, 1982年2月
  11. MIS型半導体装置の半導体及絶縁体間界面準位密度測定法, 　(特開昭58-054245)　, 1982年2月
  12. 半導体装置及びその製法, 　(特開昭59-143332)　
  13. 半導体装置, 　(特許1927828)　, 1984年5月
  14. 超伝導薄膜の形成法,　 (特開昭63-252313)　, 1987年4月
  15. 半導体装置, 　(特開昭63-305561)　, 1987年4月
  16. 半導体光電変換装置, 　(特許1454005)　, 1987年4月
  17. 低温核融合反応を行わせる方法及びその装置,　 (特開平03-020696)　, 1989年12月
  18. 低温核融合反応方法及装置, 　(特開平03-183987)　, 1989年12月
  19. 低温核融合反応方法及装置, 　(特開平03-183988)　, 1989年12月
  20. 低温核融合反応方法及装置, 　(特願平2-129143)　, 1990年5月
  21. 発熱方法, 　(特許3096058)　, 1990年5月
  22. 固体パルスレーザー装置, 　(特許3045196)　, 1991年7月
  23. 時間分解発光測定装置, 　(特許2991260)　, 1992年1月
  24. 発熱方法及びその装置, 　(特開平06-221688)　, 1994年8月
  25. 発熱方法及びその装置, 　(特開平06-221689)　, 1994年8月
  26. 誘導発熱方法及びその装置, 　(特開平06-221687)　, 1994年8月
  27. 光パルス圧縮方法及び光パルス圧縮装置, 　(特開平11-212125)　, 1999年8月
  28. 太陽電池用半導体網状膜の製造方法及び装置, 　(特開2001-085725)　, 2001年3月
  29. 液化ガスを使用する発電システム, 　(特開2001-093557)　, 2001年4月
  30. MSM型半導体受光素子,　 (特開2003-023175)　, 2003年1月
  31. 半導体基板,半導体素子ならびにそれらの製造方法,　 (特願2001-233454)　, 2001年8月
  32. 半導体製造システム, 　(特開2003-045472)　, 2003年1月
  33. 化学気相成長装置,　(特願2001-246177)　, 2001年8月
  34. 受光素子, 　(特願2005-314291)　, 2005年10月
  35. 受光素子, 　(特願2005-314292)　, 2005年10月
  36. 積層型半導体集積装置　（特開2008-198675）　, 2008年8月
  37. 波長選択フィルター付き受光センサ　（特開2009-123921）　, 2008年8月
  38. 窒化ガリウム系半導体材料を用いた荷電粒子検出器, (特開2010-067738), 2010年3月
  39. 濾過フィルタおよびその製造方法、並びに濾過装置, (特開2012-071301), 2012年4月
  40. 受光素子　（特開2012-156282）, 2012年8月
  41. UVインデックス測定装置および測定方法　（特開2013-195338）, 2013年9月

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